Taiwan Semiconductor
TSM500P02DCQ RFG
MOSFET 20V Dual P-Channel MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFET
- Package
- TDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 4.7 A
- Rds On - Drain-Source Resistance
- 42 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 300 mV
- Vgs - Gate-Source Voltage
- 4.5 V
- Qg - Gate Charge
- 9.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 620 mW
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 P-Channel
- Fall Time
- 13.8 ns
- Moisture Sensitive
- Yes
- Rise Time
- 21.6 ns
- Typical Turn-Off Delay Time
- 51 ns
- Typical Turn-On Delay Time
- 6 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.