Infineon Technologies
IMBG40R036M2HXTMA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
24 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 400 V
- Id - Continuous Drain Current
- 50 A
- Rds On - Drain-Source Resistance
- 52.5 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 26 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 167 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 8.1 ns
- Product
- SiC MOSFETS
- Rise Time
- 11.9 ns
- Technology
- SiC
- Type
- G2 MOSFET
- Typical Turn-Off Delay Time
- 17.9 ns
- Typical Turn-On Delay Time
- 13 ns
- Part # Aliases
- IMBG40R036M2H SP006064679
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.