ROHM Semiconductor
UMH4NFHATN
Bipolar Transistors - BJT Dual Digital Transistor (Bias Resistor Built-in), NPN+NPN, SOT-363
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 150 mW
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- 100 mA
Show more parameters (5)
- Country of Origin
- TH
- DC Collector/Base Gain hfe Min
- 100 at 1 mA, 5 V
- DC Current Gain hFE Max
- 600 at 1 mA, 5 V
- Part # Aliases
- UMH4NFHA
- Unit Weight
- 0.068925 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.