Microchip Technology
APT18M80B
MOSFETs MOSFET MOS8 800 V 18 A TO-247
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- MOSFETs
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 19 A
- Rds On - Drain-Source Resistance
- 530 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 120 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 W
- Channel Mode
- Enhancement
Show more parameters (8)
- Configuration
- Single
- Country of Origin
- PH
- Fall Time
- 27 ns
- Forward Transconductance - Min
- 17 S
- Rise Time
- 31 ns
- Typical Turn-Off Delay Time
- 95 ns
- Typical Turn-On Delay Time
- 21 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.