ON Semiconductor
NSVMUN5336DW1T1G
Bipolar Transistors - Pre-Biased COMPLEMENTARY DIGITAL TRA
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Configuration
- Dual
- Transistor Polarity
- NPN, PNP
- Typical Input Resistor
- 100 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 150
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 385 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 6 V
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.