Vishay / Siliconix
IRFBG30PBF
MOSFET N-CH 1000V HEXFET MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- IRFBG
- Package
- TO-220AB-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- E
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1 kV
- Id - Continuous Drain Current
- 3.1 A
- Rds On - Drain-Source Resistance
- 5 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 80 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 125 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 2.1 S
- Fall Time
- 29 ns
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 89 ns
- Typical Turn-On Delay Time
- 12 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.