ON Semiconductor
2SC5551AF-TD-E
RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- RF Bipolar Transistors
- Series
- 2SC5551A
- Package
- PCP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 90
- Collector- Emitter Voltage VCEO Max
- 30 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 300 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Pd - Power Dissipation
- 1.3 W
- Unit Weight
- 0.001804 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.