NXP Semiconductors
MMRF5300NR5
RF MOSFET Transistors 2700-3500 MHz, 60 W PEAK, 50V WIDEBAND RF POWER GaN TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- OM-270-2
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- GaN
- Id - Continuous Drain Current
- 70 mA
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Gain
- 17 dB
- Output Power
- 60 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2.7 GHz to 3.5 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 105.3 W
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 8 V
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Part # Aliases
- 935322537528
- Unit Weight
- 0.019566 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.