Infineon Technologies
BFR 360F H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFR360
- Package
- TSFP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 6 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 35 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- DC Current Gain hFE Max
- 160
- Operating Frequency
- 3.5 GHz
- Type
- RF Bipolar Small Signal
Show more parameters (3)
- Gain Bandwidth Product fT
- 14 GHz
- Pd - Power Dissipation
- 210 mW
- Part # Aliases
- BFR360FH6327XTSA1 BFR36FH6327XT SP000750428
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.