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onsemi

NJL0281DG

Bipolar Transistors - BJT NPN 150W THERMALTRAK PPD

Basic Information

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Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
NJL0281D
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
15 A
Collector- Emitter Voltage VCEO Max
260 V
Collector- Base Voltage VCBO
260 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1 V
Pd - Power Dissipation
180 W
Gain Bandwidth Product fT
30 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Country of Assembly
KR
Country of Diffusion
MY
Country of Origin
KR
DC Collector/Base Gain hfe Min
75
Unit Weight
0.352740 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NJL0281DG Specifications and Datasheet | ChipSourceHub