STMicroelectronics
STB45N60DM2AG
MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB45N60DM2AG
- Package
- D2PAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
27 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 34 A
- Rds On - Drain-Source Resistance
- 93 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 56 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 250 W
Show more parameters (15)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- MDmesh
- Height
- 4.6 mm
- Length
- 10.4 mm
- Product
- Power MOSFET
- Transistor Type
- 1 N-Channel Power MOSFET
- Type
- High Voltage
- Width
- 9.35 mm
- Fall Time
- 6 ns
- Rise Time
- 27 ns
- Typical Turn-Off Delay Time
- 85 ns
- Typical Turn-On Delay Time
- 29 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.