Diodes Incorporated
ZXTN2031FTA
Bipolar Transistors - BJT NPN Medium Power
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTN2031
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 7 V
- Maximum DC Collector Current
- 5 A
- Gain Bandwidth Product fT
- 125 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 190 at 10 mA, 2 V
- Height
- 1 mm
- Length
- 3.05 mm
Show more parameters (5)
- Width
- 1.4 mm
- Continuous Collector Current
- 4.5 A
- DC Collector/Base Gain hfe Min
- 190 at 10 mA, 2 V, 200 at 500 mA, 2 V, 200 at 2 A, 2 V, 80 at 5 A, 2 V
- Pd - Power Dissipation
- 1 W
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.