Infineon Technologies
BFP840ESDH6327XTSA1
RF Bipolar Transistors RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP840
- Package
- SOT-343-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 2.25 V
- Emitter- Base Voltage VEBO
- 2.9 V
- Continuous Collector Current
- 35 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 80 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 75 mW
- Part # Aliases
- 840ESD BFP BFP84ESDH6327XT H6327 SP000943010
Show more parameters (1)
- Unit Weight
- 0.000226 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.