Central Semiconductor
BC858B TR
Bipolar Transistors - BJT PNP 30Vebo 30Vceo 5.0Vebo 100mA 350mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC858B
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.65 V
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 475 at 2 mA, 5 V
Show more parameters (4)
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 220 at 2 mA, 5 V
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- BC858B PBFREE TR
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.