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Qorvo

QPD1823

RF JFET Transistors 1.8-2.4GHz GaN 220W 48V

Basic Information

View Datasheet ↗
Manufacturer
Qorvo
Product Category
RF JFET Transistors
Series
QPD
Package
NI400-2
Mounting Style
SMD/SMT
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Transistor Type
HEMT
Technology
GaN SiC
Gain
21 dB
Transistor Polarity
N-Channel
Output Power
220 W
Minimum Operating Temperature
- 40 C
Application
Microcell Base Station, W-CDMA / LTE
Configuration
Single
Operating Frequency
1.8 GHz to 2.4 GHz
Part # Aliases
1130969

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

QPD1823 Specifications and Datasheet | ChipSourceHub