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Diodes Incorporated

ZXTP19060CFFTA

Bipolar Transistors - BJT PNP 60V Transistor

Basic Information

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Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
ZXTP19060
Package
SOT-23F-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 60 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
75 mV
Maximum DC Collector Current
- 4 A
Gain Bandwidth Product fT
180 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
500 at - 100 mA, -2 V
Height
1 mm
Show more parameters (6)
Length
3 mm
Width
1.7 mm
Continuous Collector Current
- 4 A
DC Collector/Base Gain hfe Min
30 at - 4 A, - 2 V
Pd - Power Dissipation
2000 mW
Unit Weight
0.001721 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZXTP19060CFFTA Specifications and Datasheet | ChipSourceHub