Taiwan Semiconductor
BC807-40W RF
Bipolar Transistors - BJT -50V, -0.5A, PNP Bipolar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Continuous Collector Current
- - 500 mA
- Country of Origin
- TW
- DC Collector/Base Gain hfe Min
- 250
- DC Current Gain hFE Max
- 600
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.