Central Semiconductor
BSX20
Bipolar Transistors - BJT NPN 40Vcbo 15Vceo 4.5Vebo 10mA 4.0pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Maximum DC Collector Current
- 10 mA
- Gain Bandwidth Product fT
- 500 MHz
- DC Current Gain hFE Max
- 120
- Continuous Collector Current
- 10 mA
- DC Collector/Base Gain hfe Min
- 40
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.