onsemi
NSVS50030SB3T1G
Bipolar Transistors - BJT BIP PNP 3A 50V FOR AUTO
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSVS50030SB3
- Package
- CPH-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 185 mV
- Pd - Power Dissipation
- 1.1 W
- Gain Bandwidth Product fT
- 360 MHz
- Maximum Operating Temperature
- + 175 C
- Qualification
- AEC-Q101
Show more parameters (5)
- Continuous Collector Current
- - 3 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 200
- DC Current Gain hFE Max
- 560
- Unit Weight
- 0.000450 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.