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Vishay / Siliconix

SIRA12DDP-T1-GE3

MOSFETs 30V Vds +20, -16V Vgs PowerPAK SO-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
SiRA12DDP
Package
SO-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

20 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
81 A
Rds On - Drain-Source Resistance
3.6 mOhms
Vgs - Gate-Source Voltage
- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.4 V
Qg - Gate Charge
22 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
38 W
Show more parameters (8)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
TH
Fall Time
5 ns
Rise Time
5 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIRA12DDP-T1-GE3 Specifications and Datasheet | ChipSourceHub