ROHM Semiconductor
EMZ1FHAT2R
Bipolar Transistors - BJT NPN+PNP, SOT-563, General Purpose Amplification Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V, 6 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 150 mW
- Gain Bandwidth Product fT
- 140 MHz, 180 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- - 150 mA, 150 mA
Show more parameters (3)
- Country of Origin
- TH
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.