Central Semiconductor
PN2222A APP TIN/LEAD
Bipolar Transistors - BJT NPN 75Vcbo 40Vceo 6.0Vebo 800mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN2222
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 70 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 800 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 40 at 10 V, 500 mA
- DC Current Gain hFE Max
- 300 at 10 V, 150 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.