Diodes Incorporated
DPLS160V-7
Bipolar Transistors - BJT PNP .3W
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DPLS160
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 220 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250 at 1 mA, 5 V
- Height
- 0.6 mm
- Length
- 1.6 mm
Show more parameters (4)
- Width
- 1.2 mm
- DC Collector/Base Gain hfe Min
- 250
- Pd - Power Dissipation
- 300 mW
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.