SemiQ
GP3T016A120H
SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- SiC MOSFETs
- Series
- GP3T
- Package
- TO-247-4L
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
23 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 350 A
- Rds On - Drain-Source Resistance
- 23 mOhms
- Vgs - Gate-Source Voltage
- - 4.5 V, + 18 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 260 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 484 W
- Channel Mode
- Enhancement
Show more parameters (11)
- Configuration
- Single
- Country of Origin
- PH
- Fall Time
- 20 ns
- Forward Transconductance - Min
- 29 S
- Product
- MOSFETs
- Rise Time
- 25 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- SiC MOSFET
- Typical Turn-Off Delay Time
- 65 ns
- Typical Turn-On Delay Time
- 21 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.