Vishay / Siliconix
SIHA24N80AE-GE3
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SIHA E
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 9 A
- Rds On - Drain-Source Resistance
- 184 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 59 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 35 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 51 ns
- Forward Transconductance - Min
- 5.5 S
- Rise Time
- 44 ns
- Transistor Type
- E Series Power MOSFET
- Typical Turn-Off Delay Time
- 29 ns
- Typical Turn-On Delay Time
- 21 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.