Central Semiconductor
2N3134
Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3134
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 0.6 V
- Gain Bandwidth Product fT
- 200 MHz
- DC Current Gain hFE Max
- 300
- DC Collector/Base Gain hfe Min
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.