Diodes Incorporated
MMST5551-7-F
Bipolar Transistors - BJT NPN BIPOLAR
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- MMST5551
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 150 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250
Show more parameters (7)
- Height
- 1 mm
- Length
- 2.2 mm
- Width
- 1.35 mm
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.