ROHM Semiconductor
UMT1NTN
Bipolar Transistors - BJT DUAL PNP 50V 150MA SOT-363
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- UMT1N
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 6 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Height
- 0.9 mm
- Length
- 2 mm
Show more parameters (6)
- Width
- 1.25 mm
- Continuous Collector Current
- - 150 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 150 mW
- Part # Aliases
- UMT1N
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.