ChipSourceHub

STMicroelectronics

PD55025-E

RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
RF MOSFET Transistors
Series
PD55025-E
Package
PowerSO-10RF-Formed-4
Mounting Style
SMD/SMT
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
7 A
Vds - Drain-Source Breakdown Voltage
40 V
Gain
14.5 dB
Output Power
25 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Height
3.5 mm
Length
7.5 mm
Operating Frequency
1 GHz
Show more parameters (7)
Type
RF Power MOSFET
Width
9.4 mm
Channel Mode
Enhancement
Moisture Sensitive
Yes
Pd - Power Dissipation
79 W
Vgs - Gate-Source Voltage
20 V
Unit Weight
0.105822 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PD55025-E Specifications and Datasheet | ChipSourceHub