ON Semiconductor
NSVMMUN2235LT1G
Bipolar Transistors - BJT NPN DIGITAL TRANSIST
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 140
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 246 mW
Show more parameters (2)
- Qualification
- AEC-Q101
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.