ON Semiconductor
NSS20101JT1G
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT)
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS20101J
- Package
- SC-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 350 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.7 mm
- Length
- 1.6 mm
- Width
- 0.85 mm
Show more parameters (2)
- Pd - Power Dissipation
- 300 mW
- Unit Weight
- 0.000095 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.