ROHM Semiconductor
IMZ4T108
Bipolar Transistors - BJT NPN/PNP 32V 500MA
Basic Information
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- IMZ4T
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 32 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.5 A
- Gain Bandwidth Product fT
- 200 MHz, 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Height
- 1.1 mm
- Length
- 2.9 mm
Show more parameters (5)
- Width
- 1.6 mm
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 300 mW
- Part # Aliases
- IMZ4
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.