Infineon Technologies
BFR380L3E6327XTMA1
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFR380L3
- Package
- TSLP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 90
- Collector- Emitter Voltage VCEO Max
- 6 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 80 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 14 GHz
- Maximum DC Collector Current
- 80 mA
Show more parameters (2)
- Pd - Power Dissipation
- 380 mW
- Part # Aliases
- 380L3 BFR BFR38L3E6327XT E6327 SP000013562
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.