Infineon Technologies
BCV62AE6327HTSA1
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BCV62
- Package
- SOT-143-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 220
- Continuous Collector Current
- 100 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 125
- Pd - Power Dissipation
- 300 mW
- Part # Aliases
- 62A BCV BCV62AE6327XT E6327 SP000010889
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.