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ON Semiconductor

EMF18XV6T5G

Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
EMF18XV6
Package
SOT-563-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
47 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
357 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80
Show more parameters (5)
Height
0.55 mm
Length
1.6 mm
Width
1.2 mm
Number of Channels
2 Channel
Unit Weight
0.000106 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

EMF18XV6T5G Specifications and Datasheet | ChipSourceHub