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Toshiba

XPH4R714MC,L1XHQ

MOSFETs 132W 1MHz Automotive; AEC-Q101

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Series
UMOS VI
Package
SOP-Advance-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
4.7 mOhms
Vgs - Gate-Source Voltage
- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Qg - Gate Charge
160 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
132 W
Show more parameters (10)
Channel Mode
Enhancement
Qualification
AEC-Q101
Country of Origin
JP
Fall Time
495 ns
Rise Time
227 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
1986 ns
Typical Turn-On Delay Time
356 ns
Part # Aliases
XPH4R714MC,L1XHQ(O
Unit Weight
0.012699 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

XPH4R714MC,L1XHQ Specifications and Datasheet | ChipSourceHub