Infineon Technologies
FF7MR12W1M1HB17BPSA1
MOSFET Modules EASY
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Package
- 48 mm x 33.8 mm x 12 mm
- Mounting Style
- Press Fit
- Packaging
- Tray
Technical Specifications
18 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 105 A
- Rds On - Drain-Source Resistance
- 5.8 mOhms
- Vgs - Gate-Source Voltage
- - 7 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5.15 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 20 mW
- Configuration
- Dual
- Country of Origin
- AT
Show more parameters (6)
- Fall Time
- 34 ns
- Rise Time
- 110 ns
- Typical Turn-Off Delay Time
- 119 ns
- Typical Turn-On Delay Time
- 78 ns
- Vf - Forward Voltage
- 5.28 V
- Part # Aliases
- FF7MR12W1M1H_B17 SP005858910
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.