ROHM Semiconductor
RS1E301GNTB1
MOSFET NCH 30V 80A POWER
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- HSOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 2.2 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 39.8 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 33 W
Show more parameters (7)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 27 ns
- Rise Time
- 14.8 ns
- Typical Turn-Off Delay Time
- 70.5 ns
- Typical Turn-On Delay Time
- 21 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.