Central Semiconductor
BC856BT TR
Bipolar Transistors - BJT 80Vcbo 65Vceo 5.0Vebo 100mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC856
- Package
- SOT-523
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 475
Show more parameters (5)
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 220
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- BC856BT PBFREE TR
- Unit Weight
- 0.000071 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.