IXYS
IXFA34N65X2
MOSFET 650V/34A Ultra Junction X2-Class
Basic Information
- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- 650V Ultra Junction X2
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 34 A
- Rds On - Drain-Source Resistance
- 105 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 56 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 540 W
- Configuration
- Single
Show more parameters (8)
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Forward Transconductance - Min
- 14 S
- Fall Time
- 16 ns
- Rise Time
- 45 ns
- Typical Turn-Off Delay Time
- 47 ns
- Typical Turn-On Delay Time
- 46 ns
- Unit Weight
- 0.068654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.