Infineon Technologies
BSS806N H6327
MOSFET N-Ch 20V 2.3A SOT-23-3
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- BSS806
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 2.3 A
- Rds On - Drain-Source Resistance
- 41 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 550 mV
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 1.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 mW (1/2 W)
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Height
- 1.1 mm
- Length
- 2.9 mm
- Transistor Type
- 1 N-Channel
- Width
- 1.3 mm
- Forward Transconductance - Min
- 9 S
- Fall Time
- 3.7 ns
- Rise Time
- 9.9 ns
- Typical Turn-Off Delay Time
- 12 ns
- Typical Turn-On Delay Time
- 7.5 ns
- Part # Aliases
- BSS806NH6327XTSA1 BSS86NH6327XT SP000928952
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.