Infineon Technologies
IMBG65R030M1HXTMA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- CoolSiC 650V
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 63 A
- Rds On - Drain-Source Resistance
- 42 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.7 V
- Qg - Gate Charge
- 49 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 234 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Tradename
- CoolSiC
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- MY
- Product
- MOSFETs
- Technology
- SiC
- Part # Aliases
- IMBG65R030M1H SP005539165
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.