onsemi
CPH3116-TL-E
Bipolar Transistors - BJT BIP PNP 1A 50V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- CPH3116
- Package
- CPH-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 280 mV
- Pd - Power Dissipation
- 900 mW
- Gain Bandwidth Product fT
- 420 MHz
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- CN
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200 at - 100 mA, - 2 V
- DC Current Gain hFE Max
- 560 at - 100 mA, - 2 V
- Unit Weight
- 0.000441 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.