ON Semiconductor
2SA2016-TD-E
Bipolar Transistors - BJT BIP PNP 7A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2016
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 240 mV
- Maximum DC Collector Current
- 7 A
- Gain Bandwidth Product fT
- 330 MHz
- Continuous Collector Current
- 7 A
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 3.5 W
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.