NXP Semiconductors
BFU530WX
RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- Bipolar Wideband
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 60
- Collector- Emitter Voltage VCEO Max
- 16 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 10 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 24 V
- DC Current Gain hFE Max
- 200
Show more parameters (9)
- Operating Frequency
- 2 GHz
- Operating Temperature Range
- - 40 C to + 150 C
- Output Power
- 10 dBm
- Type
- Wideband RF Transistor
- Gain Bandwidth Product fT
- 11 GHz
- Maximum DC Collector Current
- 65 mA
- Pd - Power Dissipation
- 450 mW
- Part # Aliases
- 934067694115
- Unit Weight
- 0.000196 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.