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Nexperia

PBSS5620PA,115

Bipolar Transistors - BJT 20V 6A PNP LO VCEsat TRANSISTOR

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
DFN-2020-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 20 V
Emitter- Base Voltage VEBO
- 7 V
Maximum DC Collector Current
- 7 A
Gain Bandwidth Product fT
80 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Height
0.61 mm
Length
2.1 mm
Width
2.1 mm
Show more parameters (3)
Continuous Collector Current
- 6 A
Pd - Power Dissipation
2.1 W
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS5620PA,115 Specifications and Datasheet | ChipSourceHub