Toshiba
2SC5354-1(F)
Bipolar Transistors - BJT Transistor NPN 800V 5A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5354
- Package
- TO-3P-N-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 900 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 5 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 60
- Continuous Collector Current
- 5 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 100 W
- Unit Weight
- 0.194007 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.