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Vishay / Siliconix

SISA72ADN-T1-GE3

MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
SIS
Package
PowerPAK1212-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
94 A
Rds On - Drain-Source Resistance
3.25 mOhms
Vgs th - Gate-Source Threshold Voltage
1 V
Vgs - Gate-Source Voltage
20 V, - 16 V
Qg - Gate Charge
50 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
52 W
Show more parameters (9)
Configuration
Single
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Transistor Type
1 N-Channel
Forward Transconductance - Min
76 S
Fall Time
5 ns
Rise Time
7 ns
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
15 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SISA72ADN-T1-GE3 Specifications and Datasheet | ChipSourceHub