ROHM Semiconductor
2SCR522UBTL
Bipolar Transistors - BJT Trans GP BJT NPN 20V 0.2A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SCR522UB
- Package
- UMT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Gain Bandwidth Product fT
- 400 MHz
- DC Current Gain hFE Max
- 560 mA
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 200 mW
- Part # Aliases
- 2SCR522UB
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.