NXP / Freescale
A2T18H160-24SR3
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP / Freescale
- Product Category
- RF MOSFET Transistors
- Package
- NI-780S-4L2L-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 600 mA, 1 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 17.9 dB
- Output Power
- 28 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.805 GHz to 1.88 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Part # Aliases
- 935316045128
- Unit Weight
- 0.164793 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.